MOSFET Infineon IPB013N06NF2SATMA1, VDSS 60 V, ID 190 A, PG-TO263-3 de 3 pines, 2elementos
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
190 A
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
PG-TO263-3
Tipo de montaje
Montaje superficial
Conteo de Pines
3
Modo de Canal
Mejora
Número de Elementos por Chip
2
Material del transistor
SiC
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€ 3,567
Each (In a Pack of 2) (Sin IVA)
Estándar
2
€ 3,567
Each (In a Pack of 2) (Sin IVA)
Estándar
2
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Per Pack |
|---|---|---|
| 2 - 18 | € 3,567 | € 7,13 |
| 20 - 48 | € 3,21 | € 6,42 |
| 50 - 98 | € 2,994 | € 5,99 |
| 100 - 198 | € 2,783 | € 5,57 |
| 200+ | € 2,602 | € 5,20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
190 A
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
PG-TO263-3
Tipo de montaje
Montaje superficial
Conteo de Pines
3
Modo de Canal
Mejora
Número de Elementos por Chip
2
Material del transistor
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products